IGCT Gate Unit for Zero-Voltage-Switching Resonant DC Transformer Applications

Recently, integrated gate-commutated thyristors (IGCTs) have shown a great potential for the soft-switching dc transformer applications based on LLC resonant converter. The zero-voltage switching that is present in this converter topology enables an operation of IGCTs without clamping circuit and with significantly higher switching frequencies, while maintaining the exceptionally low conduction losses. The high voltage and current ratings of the IGCTs make them a preferred choice for an efficient bulk power transmission. This article shows how gate units for IGCTs can be optimized for this soft-switching application. It presents a simplification of the driving topology and the design process for high switching frequencies. This results in low power consumption and a very small size of the gate unit. The prototype of the gate unit is built and experimentally validated in a 2.5 kV 0.75 kA resonant operation of the IGCT.

Automated summary

This article investigates the optimization and design of IGCT for the soft-switching dc transformer applications. By simplifying the driving topology and increasing the switching frequency, low power consumption and a small size of the gate unit are achieved. The experimental results validate the feasibility of IGCT in high voltage and current resonant operation.