Multilevel Non-Volatile Memristive Response in e-Textile

Multilevel non-volatile (NV) resistive switching response is reported in electronic textile. The electroconductive textile as a phase change material displayed a typical write-once-read-many (WORM) memory behavior and switched abruptly from OFF to ON under the voltage-sweep mode. Furthermore, current-sweep characterization revealed a large number of intermittent multilevel NV states. A mapping of the single active and multiple passive devices across the 2-D planar structure of the textile allowed to achieve conduction modulation using a remote current-bias write/input stimulus. A comparative study of the wale and course directions in the textile displayed an anisotropic current spreading that may be utilized for selective memory writing/emulating neuron-like behavior. In addition, the textile also displayed the reset WORM or ReWORM effect, enabling it to revert to its initial high resistive state.

Automated summary

Multilevel non-volatile resistive switching behavior is observed in electronic textile, displaying write-once-read-many (WORM) memory behavior and allowing conduction modulation using a remote current-bias write/input stimulus. Anisotropic current spreading in the textile can be utilized for selective memory writing and emulating neuron-like behavior. The textile also exhibits the reset WORM or ReWORM effect.