Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 12, Pages 6610-6615Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3213636
Keywords
AlGaN/GaN high-electron mobility transistors (HEMTs); low pressure chemical vapor deposition (LPCVD); nonlinearity source resistance; SiNx passivation; transistor linearity
Funding
- National Natural Science Foundation of China [61822407, 62074161, 62004213, U20A20208]
- National Key Research and Development Program of China [2018YFE0125700]
- Beijing Science and Technology Plan [Z201100008420009]
- Youth Innovation Promotion Association of CAS
- University of CAS
- Opening Project of Key Laboratory ofMicroelectronic Devices and Integrated Technology, Institute ofMicroelectronics, CAS
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The linearity of AlGaN/GaN HEMTs can be effectively improved by utilizing LPCVD-SiNx passivation, especially at high current levels and temperatures.
The mechanism of linearity improvement in AlGaN/GaN high-electron mobility transistors (HEMTs) by low pressure chemical vapor deposition (LPCVD)-SiNx passivation is verified using an asymmetric passivation structure, based on different two-dimensional electron gas (2DEG) enhancement capability between LPCVD-SiNx and SiO2 passivation grown by plasma-enhanced CVD (PECVD). The fabricated AlGaN/GaN HEMTs with a hybrid LPCVD-SiNx/PECVD-SiO2 passivation structure deliver a linearity figure of merit third-order intermodulation point (OIP3)/PDC of 4.36 dB, which is 2.84 dB higher than HEMTs with pure PECVD-SiO2 passivation. Benefiting from the charge and electric field modulation effect of the LPCVD-SINx in the source-gate access region of HEMTs, the current-dependent nonlinear source access resistance is remarkably improved, especially at high current level over 500 mA/mm and high temperature. LPCVD-SINx could be a compelling passivation for the fabrication of high linearity GaN-based power HEMTs.
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