Journal
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Volume 70, Issue 1, Pages 56-60Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCSII.2022.3207971
Keywords
VCO; silicon carbide; JFET; extreme temperature; LTCC
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In this article, a custom-built silicon carbide (SiC) junction field-effect transistor (JFET) has been characterized, and a 60 MHz voltage-controlled oscillator (VCO) based on this SiC JFET has been designed and fabricated using low temperature co-fired ceramic (LTCC) process. The test results of the VCO prototype show that the proposed SiC JFET VCO can operate from 25 degrees C to 500 degrees C. An RF signal of 50dB above the noise floor is generated, and a tuning gain of 9.22 kHz/V is achieved at 500.C. The proposed SiC JFET VCO can serve as a fundamental building block for wireless sensing or data communication in extreme temperature industrial and space applications.
In this brief, a custom-built silicon carbide (SiC) junction field-effect transistor (JFET) is characterized from room temperature to 525 degrees C, and a 60 MHz voltage-controlled oscillator (VCO) based on this SiC JFET is designed and fabricated through low temperature co-fired ceramic (LTCC) process. The test results of the VCO prototype demonstrate that the proposed SiC JFET VCO is capable of operating from 25 degrees C to 500 degrees C. RF signal of 50dB above the noise floor is generated, and the tuning gain of 9.22 kHz/V is achieved at 500.C. The proposed SiC JFET VCO can serve as the fundamental building block for wireless sensing or data communication in extreme temperature industrial and space applications.
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