Journal
IEEE SENSORS JOURNAL
Volume 23, Issue 2, Pages 1052-1059Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2022.3220634
Keywords
High pressure; nonlinearity; piezoresistive pressure sensor; S-shaped piezoresistor
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In this article, a new type of S-shaped piezoresistor was proposed to optimize the linearity of pressure sensors. Two types of silicon piezoresistive absolute pressure sensors were designed, one with tri-meander-shaped piezoresistors and the other with S-shaped piezoresistors. The results showed that the pressure sensor with S-shaped piezoresistors achieved about 30% better linearity compared to the sensor with tri-meander-shaped piezoresistors, with linearity and accuracy reaching 0.045% FS and 0.054% FS under the voltage source.
Silicon piezoresistive pressure sensors are widely used, and the pursuit of high linearity and high accuracy of sensors is always there. In this article, through simulations and calculations, including higher order piezoresistance effects, an S-shaped piezoresistor is proposed to optimize the linearity of pressure sensors; that is, the piezoresistive connecting arms are also lightly doped silicon. Two kinds of silicon piezoresistive absolute pressure sensors with a circular diaphragm in the range of 0-60 MPa were designed and fabricated, respectively, with tri-meander-shaped piezoresistors and S-shaped piezoresistors. After measurement, the linearity of the pressure sensor with S-shaped piezoresistors is about 30% better than that of the sensor with tri-meander-shaped piezoresistors, and the linearity and accuracy can reach 0.045% FS and 0.054% FS under the voltage source.
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