Journal
IEEE SENSORS JOURNAL
Volume 22, Issue 24, Pages 23699-23704Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2022.3219553
Keywords
Novel drive mode; sensitivity; temperature sensing; vertical metal-oxide-semiconductor (MOS) type diode
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This study experimentally demonstrates that the highest sensitivity value (21.2 mV/K) of the Ni-(50 nm)-Au-(100nm)/Ga2O3/p-Si vertical MOS type diode in temperature sensing can be obtained by using the constant capacitance mode at 1 nF, which is higher than the results reported in the literature except in the cryogenic temperature region and near room temperature.
Sensitivity (S) and drive mode are crucial issues for the vertical metal-oxide-semiconductor (MOS) type diode applied in temperature sensing. In this study, experimentally, we indicated that the S values of the Ni-(50 nm)-Au-(100nm)/Ga2O3/p-Si vertical MOS type diode, using the measured capacitance-voltage (C-m-V) outputs, are obtained with a novel drive mode. We applied the constant capacitance mode to drive the silicon thermo-diodes as well as constant current mode, and constant voltage mode, which are known as two different methods in the literature. Meanwhile, the S value is 21.2 mV/K at 1 nF. This value is the highest value proven in the literature excepting the cryogenic temperature region, and near room temperature. This study provided an original structure for the silicon thermo-diodes and a novel way to drive them.
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