4.6 Article

A Cryo-CMOS Low-Noise Amplifier With 2.3-to-8.5-K Noise Temperature at 20 K for Highly Integrated Radio-Astronomy Receivers

Journal

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 32, Issue 11, Pages 1319-1322

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2022.3178579

Keywords

CMOS integrated circuits; cryogenic electronics; low-noise amplifiers (LNAs); radio astronomy; scientific instrumentation

Funding

  1. University of Calgary
  2. Natural Sciences and Engineering Research Council of Canada (NSERC) [RGPIN/03855-2018, RGPAS/522621-2018]
  3. Canada Research Chair [950-228619]
  4. CMC Microsystems

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This letter presents a cryo-CMOS low-noise amplifier (LNA) operating at 0.9-1.8 GHz. The LNA is built-in standard 65-nm CMOS and designed for highly integrated radio astronomy receivers. The measured cryogenic noise parameters confirm noise matching in the band and show that the LNA achieves its minimum noise temperature at the desired frequency range. The LNA operates at 20K, consumes 115 mW of power, and provides a gain of 37.2 +/- 2.4 dB with a noise temperature of 2.3 to 8.5 K and |S-11| <-10 dB.
This letter presents a 0.9-1.8-GHz cryo-CMOS low-noise amplifier (LNA) built-in standard 65-nm CMOS for highly integrated radio astronomy receivers. The measured cryogenic noise parameters confirm noise matching in the band and demonstrate that the LNA nears its minimum noise temperature at the desired frequency range. The proposed LNA operates at 20 K, consumes 115 mW of power, and provides a 37.2 +/- 2.4 dB gain (S-21) with a noise temperature (figure) of 2.3 to 8.5 K (0.03 to 0.13 dB) and vertical bar S-11 vertical bar < -10 dB.

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