2.69 kV/2.11 mΩ•cm2 and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

In this letter, we demonstrate high-performance lateral AlGaN/GaN hybrid anode diodes (HADs) with p-GaN stripe array gate (PSAG) structure with much reduced turn-on voltage (V-T) compared with reference p-GaN gate HADs. Without field plates (FPs) or passivation, the PSAG-HADwith an anode-cathodedistance (L-AC) of 20 mu m and p-GaN extension length (L-E) of 3 mu m showed a low V-T of 0.8 V, a low reverse leakage current of 1.87 nA/mm at -1 kV, a high I-ON/I-OFF ratio of similar to 10(11), a high breakdown voltage (BV) of 2.69 kV and a low specific ON-resistance (R-ON,R- sp) of 2.11 m Omega center dot cm(2). This results in a Baliga's figure-of-merit of 3.43 GW/cm(2), which is the highest among reported lateral GaN HADs to date. This work shows that the PSAG-HADs are promising for next-generation high-voltage high-efficiency power electronics.

Automated summary

In this letter, high-performance lateral AlGaN/GaN hybrid anode diodes (HADs) with p-GaN stripe array gate (PSAG) structure are demonstrated, showing much reduced turn-on voltage (V-T) compared with reference p-GaN gate HADs. The PSAG-HADs, without field plates (FPs) or passivation, exhibited a low V-T of 0.8 V, a low reverse leakage current of 1.87 nA/mm at -1 kV, a high I-ON/I-OFF ratio of similar to 10^11, a high breakdown voltage (BV) of 2.69 kV, and a low specific ON-resistance (R-ON,R- sp) of 2.11 mΩ·cm^2. This work demonstrates the promising potential of PSAG-HADs for next-generation high-voltage high-efficiency power electronics.