Related references
Note: Only part of the references are listed.
Article
Chemistry, Physical
Kyung Kyu Min et al.
Summary: This study demonstrated the ferroelectricity of pure HfOx without additional ion doping and confirmed its feasibility in memory devices. By controlling oxygen vacancies and the thermal quenching process, variation-resistant and thermally stable ferroelectric pure HfOx with remarkable polarization can be achieved. The modulation of tunneling resistance in MFIS ferroelectric tunnel junction devices showed adjustable tunneling current over a 2-order current range, indicating the potential for multilevel memory operations.
APPLIED SURFACE SCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Wonjun Shin et al.
Summary: This study investigates the low-frequency noise (LFN) characteristics of hafnium-zirconium oxide (HZO) ferroelectric field-effect transistors (FeFETs) with and without high-pressure forming gas annealing (HPA) treatment. The origin of 1/f noise in the FeFET without HPA changes from carrier number fluctuation to Hooge's mobility fluctuation after wake-up due to remote phonon scattering from the polarized HZO. Additionally, the Hooge's parameter is increased by program/erase (P/E) cycling-induced stress. On the other hand, only correlated mobility fluctuation is increased after wake-up in the FeFET with HPA. Furthermore, the LFN of the FeFET with HPA exhibits robustness to P/E cycling-induced stress after wake-up, demonstrating superb endurance performance.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Wonjun Shin et al.
Summary: The study utilized low-frequency noise (LFN) spectroscopy to analyze the working principles of FTJ, revealing significant differences in noise between different states and proposing high-pressure forming gas annealing as an efficient method to decrease LFN in FTJ.
Article
Physics, Applied
M. Hoffmann et al.
Summary: This study proposes the use of thermal atomic layer etching to control the film thickness of ferroelectric thin films, in order to address the impact of thickness variation on the ferroelectric properties. By crystallizing the films at an optimized thickness and subsequently reducing the thickness through etching, the ferroelectric phase stability can be decoupled from the film thickness. This approach has been demonstrated on a hafnium zirconium oxide film, showing improved read current and reduced read voltage in ferroelectric tunnel junctions.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Wonjun Shin et al.
Summary: This study investigates the effects of length and width scaling on the low-frequency noise characteristics of ferroelectric tunnel junctions (FTJs). The results show that in the high-resistance state, 1/f noise increases proportionally with length and width scaling, while shot noise is not affected by scaling. In the low-resistance state, the dependence of 1/f noise on length scaling is more sensitive than on width scaling due to the influence of process-induced damaged edge regions on the switching and conduction mechanisms.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Jinwoo Park et al.
Summary: In this study, the intrinsic variations in memristor devices and their impact on the neuromorphic system were analyzed. A memristor crossbar array was fabricated and 3-bit multilevel conductance was implemented as weight quantization to minimize performance degradation in the neural network. The study verified tuning operations, endurance and retention characteristics, and measured random telegraph noise (RTN) characteristics. A memristive neural network was constructed using off-chip training and evaluated for classification accuracy by applying intrinsic variations to quantized weights. The results highlight the importance of considering intrinsic variations in transferring pre-trained weights to a memristive neural network through off-chip training.
Article
Chemistry, Multidisciplinary
Yancong Chen et al.
Summary: This study proposes a novel multiferroic tunneling junction that utilizes the electric polarization direction of the 2D ferroelectric material In2Se3 and the magnetization alignment of the electrodes to modulate resistance, achieving multiple resistance states. The inserted h-BN layer enhances both tunneling magnetoresistance and electroresistance, showing great potential in non-destructive non-volatile memories.
Article
Chemistry, Multidisciplinary
Adil Rehman et al.
Summary: This study demonstrates that mobility fluctuations are the dominant mechanism of low-frequency electronic noise in high-quality graphene, providing important insights for its applications in electronics and understanding the origin of 1/f noise in any electronic device.
Article
Physics, Applied
Md Nur K. Alam et al.
Summary: A first-principles study of native point defects in various phases of Hafnia (HfO2) was conducted, with results showing that the trap depth of oxygen vacancies has little variation among different phases and reasonable agreement with experimental measurements.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
C. -Y. Liao et al.
Summary: A double-HfZrO2 (HZO) FeFET with nonidentical ferroelectric thicknesses demonstrated lower drive voltage, longer endurance, and retention time. Inserting an insulator to separate the ferroelectric layers improved the memory window for multilevel cell applications. Double-HZO showed lower error rate and 600 times improvement compared to single-HZO, making it a potential MLC for high-density NVM applications.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Pengying Chang et al.
Summary: This study investigates the tunneling processes of ferroelectric tunnel junction (FTJ) based on metal-ferroelectric-insulator-semiconductor (MFIS) stack for both n-type and p-type semiconductor electrodes using an experimentally calibrated model. The research shows that the conduction modes of n-type and p-type MFIS can be classified depending on the contribution of minority carriers in the semiconductor, and the optimal tunneling electroresistance (TER) for each device is achieved under different operating conditions. The findings provide insights into the band structure engineering of the MFIS structure for designing and optimizing FTJ performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Multidisciplinary
Sayani Majumdar
Summary: This study investigates the switching timescale and linear conductance modulation of organic FTJs, showing that modifying annealing temperatures and protocols for copolymer films significantly impacts device performance with the best quality devices achieving sub-nanosecond range switching timescales. Ultrafast switching of ferroelectric domains in FTJs leads to energy-efficient and fast operating non-volatile memories, offering potential for bio-realistic neuromorphic architectures.
Article
Chemistry, Multidisciplinary
Andres Gomez et al.
Summary: This study focuses on the chemical synthesis of a novel SMO hollandite-type manganese oxide nanowire thin film on silicon, revealing its unique crystal structure and ferroelectric and piezoelectric properties. The material shows excellent deformability and high interface recombination, indicating the possibility of engineering the integration of ferroelectric oxides on silicon.
Article
Engineering, Electrical & Electronic
Giulio Franchini et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Chemistry, Analytical
Wonjun Shin et al.
SENSORS AND ACTUATORS B-CHEMICAL
(2020)
Article
Chemistry, Multidisciplinary
Wonjun Shin et al.
Article
Chemistry, Multidisciplinary
Lei Li et al.
Article
Physics, Applied
Benjamin Max et al.
JOURNAL OF APPLIED PHYSICS
(2018)
Article
Physics, Applied
Kan-Hao Xue et al.
JOURNAL OF APPLIED PHYSICS
(2018)
Article
Engineering, Electrical & Electronic
Zheng Chai et al.
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Engineering, Electrical & Electronic
Cristobal Alessandri et al.
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Physics, Applied
J. Mueller et al.
APPLIED PHYSICS LETTERS
(2011)
