Unveiling Resistance Switching Mechanisms in Undoped HfOx Ferroelectric Tunnel Junction Using Low-Frequency Noise Spectroscopy

We demonstrate that the resistance switching (RS) of an undoped hafnium oxide (HfOx)-based ferroelectric tunnel junction (FTJ) is affected not only by ferroelectric domain switching of HfOx but also by the redistribution of oxygen vacancies inside HfOx, known as the working principle of resistive random-access memory. It is revealed that the RS mechanism varies depending on the program bias applied to FTJ. Through low-frequency noise spectroscopy, a precise method for distinguishing two distinct RS processes intrinsic to FTJ is presented.

Automated summary

We demonstrate that the resistance switching of an undoped hafnium oxide-based ferroelectric tunnel junction is influenced by both ferroelectric domain switching and the redistribution of oxygen vacancies within the hafnium oxide. The resistance switching mechanism varies depending on the program bias applied to the tunnel junction. Through low-frequency noise spectroscopy, we present a precise method for distinguishing two distinct resistance switching processes intrinsic to the tunnel junction.