GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate

In this work, we report on a GaN/AlGaN superlattice based normally-off hole channel FinFET devices. A combination of Schottky gate and 60 nm wide fins led to enhancement mode operation. The device had an on-current of 13 mA/mm and an on-resistance of 300 Omega.mm. simultaneously, a large I-on /I-off > 10(7) and a current modulation of more than two orders of magnitude in the enhancement mode regime was also achieved.

Automated summary

In this study, a normally-off hole channel FinFET device based on GaN/AlGaN superlattice is reported. By combining Schottky gate with 60 nm wide fins, enhancement mode operation is achieved. The device has an on-current of 13 mA/mm and an on-resistance of 300 Omega.mm. Simultaneously, a large I-on/I-off ratio (>10^7) and a current modulation of more than two orders of magnitude in the enhancement mode regime are also achieved.