Journal
IEEE ELECTRON DEVICE LETTERS
Volume 44, Issue 2, Pages 245-248Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3228589
Keywords
HfO2; ferroelectric tunnel junction; tunneling electro resistance ratio; first principal calculation
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A low temperature annealed Zr-Rich Hf_xZr_(1-x)O_2 film based ferroelectric tunnel junction is fabricated on a silicon substrate. The film exhibits excellent ferroelectricity under operating voltages of 3.3V, 3.5V, and 3.7V, with the largest residual polarization 2Pr exceeding 50 μC/cm2. The device operates at an extremely high speed of 50ns and achieves a high tunneling electro resistance ratio (>50). Based on first-principle calculations, it is found that Zr-Rich Hf_xZr_(1-x)O_2 films will exhibit more O-phase and less T-phase. This research lays the foundation for improving the performance of HfO2 based ferroelectric tunneling junctions for future ferroelectric applications.
HfO2 based ferroelectric materials have great application potential in ferroelectric tunneling junction. Here, the low temperature annealed Zr-Rich HfxZr1-xO2 films based ferroelectric tunnel junction is fabricated on a silicon substrate. It is found that ferroelectricity of the film under operating voltages of 3.3V, 3.5V and 3.7V are excellent, where the largest residual polarization 2Pr is above 50 mu C/cm(2). The excellent ferroelectricity enables the device to operate at an extremely high speed of 50ns and achieve a high tunneling electro resistance ratio (>50). Based on the first principal calculation, we found that Zr-Rich HfxZr1-xO2 films will show more O-phase and less T-phase. This research paves the pathway to improve the performance of the HfO2 based ferroelectric tunneling junction for future ferroelectric application.
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