4.6 Article

Wafer-Level Patterning of SnO2 Nanosheets for MEMS Gas Sensors

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 11, Pages 1981-1984

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3204292

Keywords

SnO2 nanosheets; MEMS technology; patterning; ethanol sensors

Funding

  1. National Key Research and Development Program of China [2020YFB2008604, K21799109, K21799110]

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Gas sensitive nano-materials have traditionally been deposited on specific areas of a wafer using drop-casting or inkjet printing for gas sensor fabrication. However, achieving reproducibility in wafer-level patterning of sensing materials has been a challenge. In this study, a simple top-down approach using photolithography and a well-mixed photoresist-nanomaterial suspension followed by calcination was proposed for the fabrication of wafer-scale gas sensing chips. The gas sensors produced using this method showed excellent reproducibility and uniformity in sensing response to ethanol detection, making it promising for high-volume production of MEMS compatible gas sensors.
In the past few decades, gas sensitive nano-materials are usually deposited on specific area of the wafer by drop-casting or inkjet printing for application in gas sensor fabrication. However, wafer-level patterning of sensing materials with satisfactory reproducibility still encounters challenge. In this letter, we propose a facile lop-down' strategy to manufacture wafer-scale gas sensing chips with high-throughput by photolithography using a well-mixed photoresist-nanomaterial suspension, followed by calcination. The fabricated gas sensors based on the proposed approach yield excellent reproducibility and uniformity of sensing response to ethanol detection with a relative standard deviation (RSD) <4.5 %, suggesting promising application for high-volume production of MEMS compatible gas sensors.

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