Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga2O3 Based Resistive Random Access Memory Device

Herein, the memory device with a structure of Ag/Ga2O3/Pt has been successfully achieved, and the coexistence of bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors are observed. The results show that the set process of bipolar and unipolar modes can be performed only when a positive voltage is applied with the same compliance current (I-cc) of 1 mA. For the reset process, the conversion process between bipolar and unipolar modes occurs by changing the polarity of sweeping voltages without I-cc. The conduction mechanisms in two modes are conducting filaments (CFs) for the low resistance state (LRS). But for the high resistance states (HRS), it is schottky emission in BRS and space charge limited conduction mechanism in URS, respectively.

Automated summary

A memory device with an Ag/Ga2O3/Pt structure has been successfully fabricated, exhibiting both bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors. It was found that the bipolar and unipolar modes can be set by applying a positive voltage with the same compliance current (I-cc) of 1 mA. The reset process involves a polarity change of sweeping voltages without I-cc to switch between the bipolar and unipolar modes. The conduction mechanisms are identified as conducting filaments (CFs) for the low resistance state (LRS), and schottky emission for BRS, and space charge limited conduction mechanism for URS in the high resistance states (HRS), respectively.