1200-V GaN-on-Si Quasi-Vertical p-n Diodes

This work reports 1200-V quasi-vertical GaN-on-Si p-n diodes with a 6.6-mu m-thick high-quality GaN drift layer showing excellent static and dynamic performance. The as-fabricated GaN-on-Si p-n diode gives a high current on/off ratio of similar to 10(10), a low ideality factor of 1.2, a low specific on-resistance (R-on,R-sp) of 1.3m Omega center dot cm(2), and a high breakdown voltage (BV) of 1210 V. The p-n diode can properly operate at a high temperature of 175 degrees C, and the device performance can be effectively recovered after the power cycling test. A reduced dynamic on-resistance (R-on) dependence on the off-state voltage (V-OFF) and on-state conduction time (T-ON) is observed in this p-n diode and attributed to the filling dynamics of electron traps. A normalized dynamic R-on of 0.7 is realized after switching from a VOFF stress at 1000 V. As the first 1200-V GaN-on-Si vertical power device, this cost-effective p-n diode with high performance holds a great promise for high-voltage power applications.

Automated summary

This work presents a 1200-V quasi-vertical GaN-on-Si p-n diode with a 6.6-μm thick high-quality GaN drift layer, which exhibits excellent static and dynamic performance. The diode shows stable operation at high temperatures and can effectively recover after power cycling tests. The experimental results indicate a reduced dependence of the dynamic on-resistance on the off-state voltage.