Journal
IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 11, Pages 1898-1901Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3207763
Keywords
Amorphous InGaZnO (a-IGZO); thin-film transistors (TFTs); depletion-mode; voltage reference
Categories
Funding
- National Natural Science Foundation of China [62274033, 62074034, 61974070]
- Natural Science Foundation of Jiangsu Province [BK20221453]
- Start-Up Fund [NY219003]
- Jiangsu Specially Appointed Professor Plan
- 1311 Talent Program from Nanjing University of Posts and Telecommunications, A High-Level Innovation Research Institute from Guangdong Greater Bay Area Institute of Integrated Circuit and System [2019B090909006]
- Construction of New Research and Development Institutions [2019B090904015]
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A voltage reference circuit based on amorphous InGaZnO thin-film transistors has been reported, achieving a 1-V reference voltage with low quiescent consumption and stable temperature characteristics.
In this letter, a voltage reference circuit based on amorphous InGaZnO-based (a-IGZO) thin-film transistors (TFTs) is reported for the first time. Both enhancement-mode and depletion-mode TFTs in the circuit were fabricated by the use of local hydrogen doping. The 1-V reference voltage (V-REF) was achieved with an operating voltage ranging from 1.2 V to 5 V, where the line sensitivity of V-REF was 0.9%/V and the quiescent consumption was as low as 90 nW. The proposed voltage reference circuit was able to generate complementary- to-absolute temperature coefficients, resulting in stable temperature characteristics. The temperature coefficient (TC) of V-REF and I-REF was studied experimentally, where the TC of VREF was 2.3 mV/degrees at a temperature spanning from 27 degrees to 77 degrees.
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