Reduction of leakage current and large enhancement of ferroelectric properties in Sb doped Bi4Ti3O12 ferroelectric thin film with Sb doped Bi2Ti2O7 as buffer layer

Perovskite phase ferroelectric thin films Bi4-xSbxTi3O12 (Sb-( (x) ())-BIT) and pyrochlore crystal phase thin films Bi2-ySbyTi2O7 (Sb-( (y) ())-BTO) with different Sb concentration have been fabricated on Pt(111)/Ti/SiO2/Si(100) substrates through sol-gel method respectively. Test results show that the doping Sb can significantly reduce the leakage current of films. Especially when x=0.04, y=0.3 the leakage current characteristics of Sb-( (0.04) ())-BIT and Sb-( (0.3) ())-BTO both to achieve the optimal, and the ferroelectric properties Sb-( (0.04) ())-BIT are also improved. By the same means, constructed the Sb-( (0.04) ())-BIT/Sb( (0.3) ())-BTO system with Sb-( (0.3) ())-BTO as buffer layer and Sb-( (0.04) ())-BIT as ferroelectric layer. The properties of BIT ferroelectric thin films are improved by the doping of Sb element and the addition of buffer layer. This is mainly reflected in that compared to pristine BIT the leakage current of Sb-( (0.04) ())-BIT/Sb( (0.3) ())-BTO system decreases rapidly from the initial 8.8x10(-4) A/cm(2) to the current 7.2x10(-10) A/cm(2), the residual polarization 2Pr of the system increases sharply from 9.5to 70.8 mu C/cm(2) and fatigue endurance up to more than 10(10) switching cycles.

Automated summary

Ferroelectric thin films with different Sb concentration, Bi4-xSbxTi3O12 (Sb-( (x) ())-BIT) and Bi2-ySbyTi2O7 (Sb-( (y) ())-BTO), were successfully fabricated using the sol-gel method. The doping of Sb element significantly reduced the leakage current of the films. By constructing a Sb-( (0.04) ())-BIT/Sb( (0.3) ())-BTO system, the properties of BIT ferroelectric thin films were further improved, including a decrease in leakage current, an increase in residual polarization, and enhanced fatigue endurance.