Vertically oriented 2D layered perovskite-based resistive random access memory (ReRAM) crossbar arrays

Resistive random-access memory (ReRAM) based on 2D layered perovskites have recently emerged as a new class of data storage devices, and the switching materials used in these devices have attracted extensive attention in recent years. There is a certain amount of variability in ReRAM owing to the stochastic nature of the formation and rupture of the conductive path, causing failure of the switching operation in the memory array. In this work, we fabricated both randomly and vertically oriented PEA(2)MA(4)Pb(5)I(16)-based ReRAM devices and conducted comparative studies of their switching variability. We demonstrated the formation of vertical alignment in PEA(2)MA(4)Pb(5)I(16) films using methylammonium chloride (MACl) additives. Thereafter, the fabrication of 8 x 8 ReRAM crossbar arrays by patterning perovskites (similar to 600 mu m) and electrodes (line width similar to 5 mu m) using photolithography and e-beam lithography is demonstrated, and the resistive switching characteristics of both samples are discussed. Both cycle-to-cycle and device-to-device switching uniformity were improved in the vertically oriented film-based ReRAM devices, which can be explained by the narrow distribution of the energy barriers for V-I migration owing to the vertically aligned charge transport path. These results suggest that vertically oriented 2D layered perovskites have great potential in ReRAM devices with improved switching uniformity.

Automated summary

Resistive random-access memory (ReRAM) based on 2D layered perovskites is a new type of data storage device that has attracted extensive attention. In this study, both randomly and vertically oriented ReRAM devices were fabricated and compared. The vertically oriented film-based ReRAM devices showed improved switching uniformity, which can be explained by the narrow distribution of the energy barriers for charge transport due to the vertically aligned path.