Cu and Mn centered nicotinamide/nicotinic acid complexes for interlayer of Schottky photodiode

Schottky type photodiodes have gained great interest due to their fast response to light. Various materials have been used to improve their efficiency behaviors as interlayers or electrodes. In this study, we synthesized Cu-and Mn-centered nicotinamide/nicotinic acid complexes and used them for Schottky type photodiode as interfacial layer. Thus, Al/Cu-complex/p-Si and Al/Mn-complex/p-Si metal semiconductor heterojunctions were fabricated by Al metal and p-Si semiconductor. The I-V and I-t analyses were employed to identify the fabricated devices under various light power intensities. The devices were evaluated according to various diode parameters such as series resistance, ideality factor and barrier height values obtained by I-V characteristics data from thermionic emission theory, Cheung and Norde techniques. Furthermore, various parameters of photodetection such as specific detectivity, photosensitivity and responsivity were calculated from the I-t measurements. The results reveal that heterojunctions can be employed for photodiode applications.

Automated summary

In this study, Cu-and Mn-centered nicotinamide/nicotinic acid complexes were synthesized and used as interfacial layer for Schottky type photodiodes. Metal semiconductor heterojunctions (Al/Cu-complex/p-Si and Al/Mn-complex/p-Si) were fabricated and evaluated under various light power intensities through I-V and I-t analyses. The devices were assessed based on diode parameters obtained from I-V characteristics data and various photodetection parameters calculated from the I-t measurements. The results demonstrate the potential of using heterojunctions for photodiode applications.