Journal
ADVANCED MATERIALS
Volume 27, Issue 40, Pages 6289-6295Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201502314
Keywords
alloying; piezotronic strain sensors; changes of Schottky barrier height; strain sensitivity
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Funding
- Ministry of Science and Technology (MOST) of Taiwan [MOST 101-2221-E-006-131-MY3, MOST 102-2923-E-006-003-MY3, MOST 101-2221-E-006-134-MY3]
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AlxGa1-xN thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound AlxGa1-xN is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.
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