☆ 4.5 Article

One ε-Ga2O3-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity

CHINESE PHYSICS B (2023)

Related references

Note: Only part of the references are listed.

Article Engineering, Electrical & Electronic

Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode

Zhengpeng Wang et al.

Summary: Defects/traps in beta-Ga2O3 have been investigated and identified in Ni/beta-Ga2O3 Schottky barrier diode (SBD) and NiO/beta-Ga2O3 p(+)-n heterojunction diode (HJD) by deep level transient spectroscopy (DLTS). The study provides insights into the carrier transport mechanisms in Ga2O3-based power devices.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

Add to Collection

Article Engineering, Electrical & Electronic

Performance Improvement of a β-Ga2O3-Based Solar-Blind Metal Oxide Semiconductor Field-Effect Phototransistor Using In Situ Ozone Pretreatment Technology

Zhe Li et al.

Summary: In this study, a high-performance beta-Ga2O3 solar-blind metal oxide semiconductor field-effect phototransistor (SBPT) was demonstrated with low-temperature in situ ozone (O-3) pretreatment technology. The O-3 pretreatment improved the Ga-O bonding quality and exhibited excellent photoelectrical properties in the device.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

Add to Collection

Article Engineering, Multidisciplinary

Oxygen vacancies modulating self-powered photoresponse in PEDOT:PSS/ε-Ga2O3 heterojunction by trapping effect

Li Shan et al.

Summary: The modulation effect of oxygen vacancy (V-O) on photodetection performance can be inherited from a single epsilon-Ga2O3 layer to its heterojunction structure, providing the possibility for constructing regulable self-powered photodetectors. Control of V-O defects concentration in the epsilon-Ga2O3 layer leads to enhanced photodetection properties, showcasing high photo-to-dark current ratio, excellent on/off switching ratio, fast rise/decay time, large responsivity, superior detectivity, outstanding external quantum efficiency, and high rejection ratio in the PGO-O-2 photodetector.

SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2022)

Add to Collection

Article Engineering, Electrical & Electronic

Enhancement-mode normally-off β-Ga2O3:Si metal-semiconductor field-effect deep-ultraviolet phototransistor

Zeng Liu et al.

Summary: In this work, a solar-blind ultraviolet photodetector based on an Si-doped beta-Ga2O3 metal-semiconductor field-effect transistor structure is demonstrated. The photodetector exhibits low dark current, high linear dynamic range, and a good ratio of photo-to-dark current.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2022)

Add to Collection

Article Physics, Multidisciplinary

A 4x4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response

Zeng Liu et al.

Summary: This paper introduces a 4x4 beta-phase gallium oxide deep-ultraviolet rectangular photodetector array with high photo responsivity. The Ga2O3 thin film is prepared using the metalorganic chemical vapor deposition technique and the photodetector array is constructed using photolithography, lift-off, and ion beam sputtering methods. The individual photodetector cell shows good performance, and the whole array exhibits uniform performances as well.

CHINESE PHYSICS B (2022)

Add to Collection

Article Nanoscience & Nanotechnology

Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector

Xiao Tang et al.

Summary: In this study, a high-quality metastable kappa-phase Ga2O3 thin film was epitaxially grown on a flexible mica substrate. The developed flexible photodetector exhibited record-high performance for flexible Ga2O3 photodetectors and demonstrated excellent flexibility and mechanical stability.

ACS APPLIED MATERIALS & INTERFACES (2022)

Add to Collection

Article Engineering, Electrical & Electronic

Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3 Deep-Ultraviolet Photodetector

Zeng Liu et al.

Summary: A metal-semiconductor-metal (MSM) photodetector was constructed using microprocessing techniques, incorporating a β-gallium oxide thin film. The photodetector exhibited high photoresponsivity, specific detectivity, external quantum efficiency, and a linear dynamic range under 254-nm UV light illumination. The high photoconductive gain observed may lead to persistent photocurrent and suggest potential use in high deep-ultraviolet photoresponse applications.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

Add to Collection

Article Materials Science, Multidisciplinary

In-depth investigation of low-energy proton irradiation effect on the structural and photoresponse properties of e-Ga2O3 thin films

Yongtao Yang et al.

Summary: Ga2O3 with ultra-wide bandgap and high breakdown field strength has great potential in power electronics and UV opto-electronics. This study investigates the radiation hardness of e-Ga2O3 thin films under low-energy proton irradiation, and finds that the material maintains its structural and optical properties while exhibiting mild degradation in photodetector performance. This reveals the excellent radiation resistance of e-Ga2O3 and its potential for extreme environment optoelectronics.

MATERIALS & DESIGN (2022)

Add to Collection

Article Chemistry, Analytical

Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

Shiyu Zhang et al.

Summary: In this work, an SBD based on EFG Ga2O3 crystal substrate is fabricated and characterized. Electrical parameters such as Ron, φB, n, Rs, and Nd are extracted systematically by analyzing J-V and C-V curves of the device. The detailed measurements and theoretical analysis are presented in this paper.

MICROMACHINES (2021)

Add to Collection

Article Engineering, Electrical & Electronic

High-Performance Dual-Mode Solar-Blind Sensor of a Si-Doped β-Ga2O3 Trench Schottky Photodiode

Wei-Yu Jiang et al.

Summary: The Si-doped beta-Ga2O3 trench Schottky photodiode designed in this work functions as a dual-mode solar-blind ultraviolet sensor with high performance characteristics. It has the potential to be a self-powered photodetector and shows promise for ultraviolet solar-blind detection applications.

IEEE SENSORS JOURNAL (2021)

Add to Collection

Article Engineering, Electrical & Electronic

16 x 4 Linear Solar-Blind UV Photoconductive Detector Array Based on β-Ga2O3 Film

Yu-Song Zhi et al.

Summary: This article describes a 16 x 4 linear array of beta-Ga2O3-based metal-semiconductor-metal photodetector for solar-blind sensing at 254 nm wavelength. The beta-Ga2O3 film is grown using MOCVD equipment, and the photodetectors are constructed with standard processes. The photodetectors exhibit excellent performance with key parameters like photo responsivity and detectivity.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Add to Collection

Article Physics, Applied

Ultrahigh responsivity deep-ultraviolet ε-Ga2O3 field effect phototransistors with P-Si gate

Xin Zhou et al.

Summary: The ultrahigh deep-ultraviolet responsivity field effect transistors-based photodetectors with p-Si Gate were fabricated on epsilon-Ga2O3, forming a p-n heterojunction to effectively reduce dark current. The photocurrent was amplified due to the inherent gain of the transistor, resulting in a high optical response with responsivity reaching 9362.4 A W-1 and specific detectivity of 8.82 x 10(15) Jones under 254 nm incident light. The responsivity of the Ga2O3 phototransistor was found to be negatively correlated with light intensity.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)

Add to Collection

Article Physics, Multidisciplinary

A broadband UV-visible photodetector based on a Ga2O3/BFO heterojunction

Guoliang Ma et al.

Summary: A well-operated broadband UV-visible photodetector based on Ga2O3/BiFeO3 (Ga2O3/BFO) heterojunction was fabricated and characterized in this work, showing excellent photoelectric performance in the UVC waveband with potential applications.

PHYSICA SCRIPTA (2021)

Add to Collection

Article Materials Science, Multidisciplinary

Quenching of persistent photocurrent in an oxide UV photodetector

Baoshi Qiao et al.

Summary: A new type of photoconductive gain with controllable response speed is discovered in Ga2O3 photodetector, attributed to the forming and breaking of conductive filaments composed of oxygen vacancies. UV illumination has been shown to accelerate the formation of the filament, providing a direction for the combination of speed-control and high sensitivity for photodiodes.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

Add to Collection

Article Physics, Applied

Comparison of optoelectrical characteristics between Schottky and Ohmic contacts to β-Ga2O3 thin film

Zeng Liu et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)

Add to Collection

Article Nanoscience & Nanotechnology

Metal-Semiconductor-Metal ε-Ga2O3 Solar-Blind Photodetectors with a Record-High Responsivity Rejection Ratio and Their Gain Mechanism

Yuan Qin et al.

ACS PHOTONICS (2020)

Add to Collection

Article Physics, Applied

Fabrication of ε-Ga2O3 solar-blind photodetector with symmetric interdigital Schottky contacts responding to low intensity light signal

Zeng Liu et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)

Add to Collection

Article Materials Science, Multidisciplinary

Fabrication and characterization of Mg-doped ε-Ga2O3 solar-blind photodetector

Zeng Liu et al.

VACUUM (2020)

Add to Collection

Article Materials Science, Multidisciplinary

Construction of a β-Ga2O3-based metal-oxide-semiconductor-structured photodiode for high-performance dual-mode solar-blind detector applications

Zeng Liu et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

Add to Collection

Review Physics, Multidisciplinary

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Zeng Liu et al.

CHINESE PHYSICS B (2019)

Add to Collection

Review Optics

Review of gallium-oxide-based solar-blind ultraviolet photodetectors

Xuanhu Chen et al.

PHOTONICS RESEARCH (2019)

Add to Collection

Article Materials Science, Multidisciplinary

High gain broadband photoconductor based on amorphous Ga2O3 and suppression of persistent photoconductivity

Haitao Zhou et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Add to Collection

Article Materials Science, Multidisciplinary

A high-performance ultraviolet solar-blind photodetector based on a β-Ga2O3 Schottky photodiode

Zeng Liu et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Add to Collection

Article Physics, Applied

Influence of Oxygen Deficiency on the Rectifying Behavior of Transparent-Semiconducting-Oxide-Metal Interfaces

Thorsten Schultz et al.

PHYSICAL REVIEW APPLIED (2018)

Add to Collection

Article Physics, Applied

Untitled

Advanced Electronic Materials (2018)

Add to Collection

Article Physics, Applied

Layer-by-layer growth of ε-Ga2O3 thin film by metal-organic chemical vapor deposition

Zimin Chen et al.

APPLIED PHYSICS EXPRESS (2018)

Add to Collection

Article Materials Science, Multidisciplinary

Untitled

Advanced Optical Materials (2018)

Add to Collection

Article Engineering, Electrical & Electronic

Effect of surface treatments on electrical properties of beta-Ga2O3

Jiancheng Yang et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2018)

Add to Collection

Article Chemistry, Inorganic & Nuclear

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire

Francesco Mezzadri et al.

INORGANIC CHEMISTRY (2016)

Add to Collection

Article Optics

High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process

G. C. Hu et al.

OPTICS EXPRESS (2015)

Add to Collection

Article Physics, Multidisciplinary

Effects of Lattice Polarity on Interfacial Space Charges and Defect Disorder in Ionically Conducting AgI Heterostructures

Benjamin J. Morgan et al.

PHYSICAL REVIEW LETTERS (2011)

Add to Collection

Article Nanoscience & Nanotechnology

Direct Growth of Lateral ZnO Nanorod UV Photodetectors with Schottky Contact by a Single-Step Hydrothermal Reaction

Nishuang Liu et al.

ACS APPLIED MATERIALS & INTERFACES (2010)

Add to Collection

Article Physics, Applied

Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn2GeO4 nanowire

Chun Li et al.

APPLIED PHYSICS LETTERS (2010)

Add to Collection

Review Chemistry, Multidisciplinary

Nanowire Photodetectors

Cesare Soci et al.

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2010)

Add to Collection

Article Physics, Applied

Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors

O Katz et al.

APPLIED PHYSICS LETTERS (2004)

Add to Collection

© Peeref 2019-2024. All rights reserved.