One ε-Ga2O3-based solar-blind Schottky photodetector emphasizing high photocurrent gain and photocurrent-intensity linearity

The epsilon-Ga2O3 thin film was grown on sapphire substrate by using metalorganic chemical vapor deposition (MOCVD) method, and then was used to fabricate a deep-ultraviolet (DUV) photodetector (PD). The epsilon-Ga2O3 thin film shown good crystal quality and decent surface morphology. Irradiated by a 254-nm DUV light, the photodetector displayed good optoelectronic performance and high wavelength selectivity, such as photoresponsivity (R) of 175.69 A/W, detectivity (D*) of 2.46 x 10(15) Jones, external quantum efficiency (EQE) of 8.6 x 10(4)% and good photocurrent-intensity linearity, suggesting decent DUV photosensing performance. At 5 V and under illumination with light intensity of 800 mu W/cm(2), the photocurrent gain is as high as 859 owing to the recycling gain mechanism and delayed carrier recombination; and the photocurrent gain decreases as the incident light intensity increases because of the recombination of photogenerated carriers by the large photon flux.

Automated summary

The epsilon-Ga2O3 thin film was grown on a sapphire substrate using MOCVD method, and then utilized for the fabrication of a DUV photodetector. The thin film exhibited good crystal quality and surface morphology. The photodetector showed excellent optoelectronic performance and high wavelength selectivity when exposed to 254-nm DUV light, with a photoresponsivity of 175.69 A/W, detectivity of 2.46 x 10(15) Jones, EQE of 8.6 x 10(4)%, and good photocurrent-intensity linearity. At 5 V and under illumination with 800 mu W/cm(2) light intensity, a photocurrent gain as high as 859 was achieved due to the recycling gain mechanism and delayed carrier recombination; however, the photocurrent gain decreased with increasing incident light intensity due to the recombination of photogenerated carriers by the large photon flux.