Rewritable Pressure-Driven n-p Conduction Switching in Marcasite- Type CrSb2

Temperature-or pressure-driven n-p conduction type switching has been described as an emerging phenomenon for potential applications as transistors, switches, and memory devices. The key challenge in the development of such n-p conduction type switching materials is to establish maneuverable and controllable methods to achieve easy convertibility and non volatility. Herein, we report the first example of rewritable pressure and temperature dual-controlled n-p conduction-type switching in marcasite-type CrSb2. At room temperature, CrSb2 exhibits an unexcepted pressure-driven n-p conductivity-type switching around 12 GPa accompanied by a marcasite-to-arsenopyrite structural transition and a semiconductor-to-metal transition. The dramatic conduction-type switching is irreversible after pressure releasing at room temperature but reversible by annealing at a relatively low temperature (>80 degrees C). Accordingly, a multicycle bistability switching process is established under the dual regulation of both pressure and temperature. The underlying structure- property mechanism is revealed by in situ/ex situ characterization and analyses of the atomic-level microstructure, local lattice distortion, and residual stress induced by compression. This demonstration provides a new platform for the rational design of rewritable temperature/pressure-responsive photoelectric conversion devices.

Automated summary

We report a new material, CrSb2, which exhibits rewritable pressure and temperature dual-controlled n-p conduction type switching. The material undergoes a pressure-driven n-p conductivity transition at room temperature, accompanied by a structural transition and a semiconductor-to-metal transition. This transition is irreversible but can be reversed through annealing. The underlying mechanism is revealed through characterization and analysis of the microstructure, lattice distortion, and residual stress induced by compression.