Defect Photoluminescence from Alkylated Boron Nitride Nanotubes

Boron nitride nanotubes (BNNTs) are chemically function-alized by a reductive alkylation reaction for defect doping to create luminescent defects. The hexyl group attachment on the BNNT wall results in sp3 boron atom defect formation in the BN network, by which defect photoluminescence from the function-alized BNNTs is newly observed in a UV-vis region. This chemistry-based defect doping technique offers an attractive tool for bandgap engineering of BNNTs.

Automated summary

Chemical functionalization of boron nitride nanotubes (BNNTs) through reductive alkylation reaction introduces luminescent defects. Attachment of hexyl groups on the BNNT wall results in the formation of sp3 boron atom defects in the BN network, leading to defect photoluminescence in the UV-vis region. This chemistry-based defect doping technique offers an attractive tool for bandgap engineering of BNNTs.