Zinc vacancy mediated electron-hole separation in ZnO nanorod arrays for high-sensitivity organic photoelectrochemical transistor aptasensor

A novel strong solvent coordination leaching method was developed to prepare surface zinc vacancies in ZnO nanorod arrays. Remarkably, the surface-zinc-vacancy-rich ZnO nanorod arrays exhibit high electron-hole separation efficiency and excellent photoelectrochemical performance for use as a promising candidate for the next generation of organic photoelectrochemical transistor aptasensors.

Automated summary

A novel method was developed to prepare surface zinc vacancies in ZnO nanorod arrays, which exhibit high electron-hole separation efficiency and excellent photoelectrochemical performance, making them a promising candidate for the next generation of organic photoelectrochemical transistor aptasensors.