1D-2D heterostructured silicon carbide fibers@WS2 with high efficiency and broad bandwidth for microwave absorption performance

In this study, 1D@2D hetero-structured silicon carbide fibers coated by tungsten disulfide (SiCf@WS2) was successfully synthesized, and the microwave absorption performance was explored. It was found that the minimum reflection loss value reached -72.76 dB at 12.74 GHz with the thickness of 2.86 mm for 15 wt% loading of SiCf@WS2/wax. The effective absorbing bandwidth (EAB, <-10 dB) could reach up to 7.7 GHz with the thickness of 2.84 mm. The SiCf provided a wide surface for WS2 nanosheets to grow on, where the WS2 played a leading role for microwave absorption. WS2 film created more interfaces not only between SiCf and WS2 sheets but among the WS2 nanosheets themselves, which resulted in more interfacial polarization and dielectric loss enhancing the microwave absorbing abilities. In addition, the electronic properties of hetero-interface were calculated by density functional theory (DFT). The results showed that with the electronic charges transferring through the heterointerface, the interfacial polarization and dipole polarization were hugely improved. All above indicated that the hybrid of SiCf@WS2 was a promising microwave absorbing material through a facile synthesis process with low cost, which can be excellent candidate for the efficient microwave absorbing applications.

Automated summary

In this study, 1D@2D hetero-structured silicon carbide fibers coated by tungsten disulfide (SiCf@WS2) were synthesized successfully, and their microwave absorption performance was explored. It was found that SiCf@WS2/wax with a loading of 15 wt% and a thickness of 2.86 mm achieved a minimum reflection loss of -72.76 dB at 12.74 GHz. The effective absorbing bandwidth (EAB, <-10 dB) could reach up to 7.7 GHz with a thickness of 2.84 mm. The hybrid of SiCf@WS2 showed great potential as a microwave absorbing material with a facile synthesis process and low cost.