Large scale graphene thermoelectric device with high power factor using gradient doping profile

The performance of a thermoelectric device fabricated with centimeter-scale monolayer graphene (active size,-7 x 1 cm2) was investigated in this study. The carrier type and junction profile of the active graphene layer were modulated by chemical doping. After device optimization, improvements in carrier concentration of at least 200%, which led to enhancements in power factor of at least 600%, were obtained. Under optimal performance conditions, a maximum Seebeck coefficient of-350 mu V/K and power factor of-14000 mu W/mK2 could be achieved under a temperature difference of 18 K. These thermoelectric parameters are at least three times higher than the best values reported for organic or other graphene-based thermoelectric devices.

Automated summary

This study investigated the performance of a thermoelectric device made of centimeter-scale monolayer graphene. The carrier type and junction profile of the active graphene layer were modified through chemical doping. After device optimization, improvements in carrier concentration of at least 200% and enhancements in power factor of at least 600% were achieved. Under optimal conditions, a maximum Seebeck coefficient of -350 mu V/K and power factor of -14000 mu W/mK^2 were obtained, which are at least three times higher than the best values reported for other graphene-based thermoelectric devices.