Journal
APPLIED SURFACE SCIENCE
Volume 609, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2022.155032
Keywords
Self-powered; BP; Cs2SnI4 heterostructure; First-principles; Charge transfer; Photodetector
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In this study, Cs-I-BP and Sn-I-BP heterostructures were investigated for their self-powered capability and absorption performance. The results show promising applications in wearable electronics and high-performance optoelectronic devices.
Self-powered photodetectors have huge potential applications in wearable electronics, extreme environments and military fields. In this work, two types of van der Waals Cs-I-BP and Sn-I-BP heterostructures have been studied fully through first-principles calculations. The results demonstrate that both Cs-I-BP and Sn-I-BP heter-ostructures have type-II band alignment. The EP values of Cs-I-BP and Sn-I-BP heterostructures reach separately 6.02 eV and 5.64 eV by calculating across the interface. As a result, the two types of heterostructures form a large built-in electric field and possess a good self-powered capability. The absorption coefficients of the Cs-I-BP and the Sn-I-BP heterostructures significantly enhance in the ultraviolet and infrared regions. Moreover, under the modulation of biaxial stress, the heterostructure can be changed from a semiconductor to a conductor, and the energy band alignment type is changed from type II to type I as well as the light trapping ability in the near -infrared region is significantly enhanced. These findings suggest that the Cs-I-BP and the Sn-I-BP hetero-structures have promising application for tunable high performance optoelectronic devices.
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