Journal
APPLIED PHYSICS LETTERS
Volume 121, Issue 22, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0124480
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Funding
- Center for Integrated Research of Future Electronics
- JSPS KAKENHI [21H04560]
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This study investigates the temperature dependence of key parameters and their impact on achieving continuous-wave lasing in AlGaN-based laser diodes at UV-C wavelengths. The reduction in threshold voltage was achieved by tapering the sides of the laser diode mesa and reducing the lateral distance between the n- and p-electrodes. Continuous-wave lasing at room temperature was demonstrated with a threshold current density of 4.2 kA/cm(2) and a threshold voltage of 8.7 V.
Although the pulsed operation of AlGaN-based laser diodes at UV-C wavelengths has been confirmed in the previous studies, continuous oscillation without cooling is difficult because of the high operating voltage. In this study, the temperature dependence of key parameters was investigated and their impact on achieving continuous-wave lasing was discussed. A reduction in the threshold voltage was achieved by tapering the sides of the laser diode mesa and reducing the lateral distance between the n- and p-electrodes. As a result, continuous-wave lasing at room temperature was demonstrated at a threshold current density of 4.2 kA / cm(2) and a threshold voltage of 8.7 V. (C) 2022 Author(s).
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