Study of electrical transport properties of GaN-based side-gate heterostructure transistors

In this study, GaN-based side-gate heterostructure transistors (SGHTs) with two electrical operating modes were fabricated. In the first operating mode, the SGHT was utilized as a common-source voltage amplifier with low power consumption and a broad input signal range. Analysis of the main scattering mechanisms affecting the electrical transport of two-dimensional electron gas (2DEG) in the channel revealed that polar optical phonon scattering and polarization Coulomb field (PCF) scattering play dominant roles under different side-gate voltages. In addition, channel current modulation of 2DEG electron mobility is primarily attributed to PCF scattering. Due to PCF scattering, the channel width also modulates the threshold voltage in this mode of operation. Moreover, in the second operating mode, the SGHT functioned as a traditional GaN high electron mobility transistor, allowing for electrically modulated threshold voltage and transconductance. Published under an exclusive license by AIP Publishing.

Automated summary

In this study, GaN-based side-gate heterostructure transistors (SGHTs) with two different electrical operating modes were fabricated. The first mode functions as a common-source voltage amplifier with low power consumption and a broad input signal range, while the second mode allows for traditional GaN high electron mobility transistor operation.