CMOS-compatible self-aligned 3D memristive elements for reservoir computing systems

Neuromorphic capabilities of a self-aligned complementary metal-oxide-semiconductor compatible W/WOx/HfO2/Ru cell in a 3D vertical memristive structure were investigated. We show that the device exhibits nonfilamentary forming-free multilevel resistive switching with gradual resistance change. In addition, the poor retention of a low resistance state allows integration of these structures in architectures that require short-term memory characteristics such as reservoir computing systems. The ability of the device to rely on the temporal sequence of the stream was tested with the digit recognition task. Since a WOx layer was obtained by thermal oxidization and HfO2 and Ru layers were grown by atomic layer deposition methods, the device is suitable for high-density systems with high connectivity within a neural network.

Automated summary

The research investigates the neuromorphic capabilities of a self-aligned complementary metal-oxide-semiconductor compatible W/WOx/HfO2/Ru device in a 3D vertical memristive structure. The device demonstrates nonfilamentary forming-free multilevel resistive switching and gradual resistance change. It can be integrated into architectures that require short-term memory characteristics, such as reservoir computing systems. The device's ability to rely on the temporal sequence of the stream has been tested with the digit recognition task. With thermal oxidization and atomic layer deposition methods used for layer formation, the device is suitable for high-density systems with high connectivity in neural networks.