High conductivity β-Ga2O3 formed by hot Si ion implantation

Article Physics, Multidisciplinary

Disorder-Induced Ordering in Gallium Oxide Polymorphs

Alexander Azarov et al.

Summary: In this study, the phenomenon of polymorphism in gallium oxide is investigated. It is found that the amorphization can be significantly suppressed by the phase transition, leading to the fabrication of a highly oriented single-phase film. A novel mode of lateral polymorphic regrowth, not previously observed in solids, is also discovered. These findings open up new directions for research on polymorphs in Ga2O3 and potentially in other materials.

PHYSICAL REVIEW LETTERS (2022)

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Article Nanoscience & Nanotechnology

β-Gallium oxide power electronics

Andrew J. Green et al.

Summary: Gallium Oxide has become a leading ultra-wide band gap semiconductor technology due to its favorable material properties. This roadmap presents the current state-of-the-art and future challenges in the field, aiming to enhance device performance and design efficient microelectronic systems.

APL MATERIALS (2022)

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Article Chemistry, Multidisciplinary

Plasmon-Phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2 V-1 s-1

Anil Kumar Rajapitamahuni et al.

Summary: In this study, the highly reversible, electrostatic doping of beta-Ga2O3 films with tunable carrier densities using ion-gel-gated electric double-layer transistor configuration was reported. The plasmon-phonon coupling that dictates electron transport properties was investigated, and it was found that the room-temperature mobility initially increased and then decreased with increasing carrier density due to the plasmon-phonon coupling. The study also revealed the important antiscreening effect arising from dynamic screening of the electron-phonon interactions from the hybrid plasmon-phonon modes. Higher room-temperature mobility can be achieved by harnessing the dynamic screening of the electron-phonon interactions.

ACS NANO (2022)

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Article Materials Science, Multidisciplinary

Disordering of β-Ga2O3 upon irradiation with Si+ ions: Effect of surface orientation

Vladimir Trushin et al.

Summary: This study investigates the difference in structural properties of gallium oxide crystals with different surface orientations under ion irradiation. The results show that the mechanical stress in the irradiated layer varies with surface orientation, leading to different degrees of damage.

MATERIALS LETTERS (2022)

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Review Materials Science, Coatings & Films

Ion implantation in β-Ga2O3: Physics and technology

Alena Nikolskaya et al.

Summary: Gallium oxide, especially its thermodynamically stable beta-Ga2O3 phase, is considered one of the most exciting materials in research and technology due to its unique properties, with potential for green electronics. Ion implantation is a traditional method that can greatly contribute to the development of Ga2O3-based materials and devices. The current focus is on experimental studies of damage under ion irradiation and properties of Ga2O3 layers doped by ion implantation.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2021)

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Article Nanoscience & Nanotechnology

γ-phase inclusions as common structural defects in alloyed β-(AlxGa1-x)2O3 and doped β-Ga2O3 films

Celesta S. Chang et al.

Summary: The study reveals that the thermodynamically unstable gamma-phase exists in both doped beta-Ga2O3 films and beta-(AlxGa1-x)(2)O-3 films, with its thickness correlated to the growth temperature. In doped films, a surface layer of the gamma-phase is observed, and heating results in the growth of a gamma-phase region accompanied by the movement of surface Ga interstitials.

APL MATERIALS (2021)

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Review Materials Science, Multidisciplinary