4.6 Article

Dual-gated ambipolar oxide synaptic transistor for multistate excitatory and inhibitory responses

Related references

Note: Only part of the references are listed.
Article Engineering, Electrical & Electronic

Voltage Transfer Characteristics of CMOS-Like Inverters for Ambipolar SnO Thin-Film Transistors

Yong Zhang et al.

Summary: In this study, the voltage transfer characteristics (VTC) of a CMOS-like inverter using ambipolar SnO-thin-film transistor were analyzed, and the key factors influencing VTC were identified. The results showed that VTC could be improved by reducing the subgap defect states in the channel.

IEEE ELECTRON DEVICE LETTERS (2022)

Article Nanoscience & Nanotechnology

Synaptic Emulation via Ferroelectric P(VDF-TrFE) Reinforced Charge Trapping/Detrapping in Zinc-Tin Oxide Transistor

Ching-Kang Shen et al.

Summary: In this study, a simple and cost-effective ferroelectric-coupled zinc-tin oxide thin-film transistor was reported for artificial synaptic devices. The device demonstrated superior artificial synapse responses and successfully emulated important features of synaptic behavior, highlighting its potential as a hardware candidate for neuromorphic computing.

ACS APPLIED MATERIALS & INTERFACES (2022)

Article Nanoscience & Nanotechnology

Reconfigurable Artificial Synapses with Excitatory and Inhibitory Response Enabled by an Ambipolar Oxide Thin-Film Transistor

Chi-Hsin Huang et al.

Summary: A gate-tunable synaptic device has been developed using ambipolar oxide semiconductor thin-film transistors to control excitatory and inhibitory synaptic responses. The device can emulate the fundamental synaptic responses of biological nervous systems and has potential applications in developing artificial intelligence systems.

ACS APPLIED MATERIALS & INTERFACES (2022)

Article Chemistry, Multidisciplinary

A flexible dual-gate hetero-synaptic transistor for spatiotemporal information processing

Xuerong Liu et al.

Summary: Artificial hetero-synapses based on dual-gate electrolyte transistors demonstrate the ability to integrate and store spatiotemporal information for long-term memory emulation. Compared to single-gate synaptic transistors, neural networks using hetero-synaptic transistors show improved classification accuracy.

NANOSCALE ADVANCES (2022)

Article Nanoscience & Nanotechnology

Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing

Chi-Hsin Huang et al.

Summary: The study demonstrates a new type of gate-tunable memristor based on 2D-SnO2 material, which can achieve complex neuromorphic learning. By regulating the gate bias, the gate-tunable synaptic device dynamically modulates the analog switching behavior, while exhibiting excellent linearity and an improved conductance change ratio. This new device opens up new opportunities for advancing neuromorphic device technology.

ACS APPLIED MATERIALS & INTERFACES (2021)

Article Physics, Applied

Oxide semiconductor-based ferroelectric thin-film transistors for advanced neuromorphic computing

Min-Kyu Kim et al.

Summary: A ferroelectric thin-film transistor (FeTFT) utilizing zirconium-doped hafnia and indium zinc tin oxide has been proposed for neuromorphic computing applications, showing reliable conductance modulation characteristics suitable for both deep neural networks and spiking neural networks. The FeTFT demonstrated high recognition accuracy for hand-written images and ability to emulate spike-time-dependent plasticity, indicating its promise as a candidate for neuromorphic computing hardware.

APPLIED PHYSICS LETTERS (2021)

Article Engineering, Electrical & Electronic

Enhanced Performance of Atomic Layer Deposited Thin-Film Transistors With High-Quality ZnO/Al2O3 Interface

Huijin Li et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

Article Nanoscience & Nanotechnology

Switching Mechanism behind the Device Operation Mode in SnO-TFT

Alex W. Lee et al.

ADVANCED ELECTRONIC MATERIALS (2020)

Article Nanoscience & Nanotechnology

Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors

Yao Yao et al.

ADVANCED ELECTRONIC MATERIALS (2019)

Article Chemistry, Multidisciplinary

Pressure-Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Antonio Di Bartolomeo et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

Review Chemistry, Multidisciplinary

Recent Advances in Ambipolar Transistors for Functional Applications

Yi Ren et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

Review Neurosciences

Glutamate Transporters in Hippocampal LTD/LTP: Not Just Prevention of Excitotoxicity

Joana Goncalves-Ribeiro et al.

FRONTIERS IN CELLULAR NEUROSCIENCE (2019)

Article Multidisciplinary Sciences

Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide

Vinod K. Sangwan et al.

NATURE (2018)

Article Physics, Applied

Performance regeneration of InGaZnO transistors with ultra-thin channels

Binglei Zhang et al.

APPLIED PHYSICS LETTERS (2015)

Article Engineering, Electrical & Electronic

Enhancement mode p-channel SnO thin-film transistors with dual-gate structures

Yong-Jin Choi et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2015)

Review Chemistry, Multidisciplinary

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

E. Fortunato et al.

ADVANCED MATERIALS (2012)

Article Chemistry, Multidisciplinary

Ambipolar Oxide Thin-Film Transistor

Kenji Nomura et al.

ADVANCED MATERIALS (2011)

Review Materials Science, Multidisciplinary

Present status of amorphous In-Ga-Zn-O thin-film transistors

Toshio Kamiya et al.

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2010)

Article Physics, Applied

Write-erase and read paper memory transistor

Rodrigo Martins et al.

APPLIED PHYSICS LETTERS (2008)