Journal
APPLIED PHYSICS LETTERS
Volume 121, Issue 19, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0123496
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Funding
- National Natural Science Foundation of China [62074105]
- National Key R&D Program of China [2019YFE0124200]
- Natural Science Foundation of Jiangsu Higher Education Institutions of China [20KJA510004]
- Collaborative Innovation Center of Suzhou Nano Science and Technology
- 111 Project
- Joint International Research Laboratory of Carbon-Based Functional Materials and Devices
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A hybrid memristor based on the bilayer structure of IGZO/PVA has been developed, which can emulate synaptic potentiation and exhibits high reliability and good linearity.
A hybrid memristor based on the bilayer structure of indium gallium zinc oxide (IGZO)/polyvinyl alcohol (PVA) is developed, which demonstrates device state updates in an analog manner with high reliability. The IGZO/PVA heterojunction is crucial for the realization of the memristive characteristics, presumably associated with oxygen ion redistribution across the IGZO/PVA interface. The hybrid memristor may act as an electronic synapse, being capable of emulating synaptic potentiation with good linearity, synaptic depression, and paired-pulse facilitation. It highlights potential applications of the oxide-polymer heterojunction in the exploration of neuromorphic devices. Published under an exclusive license by AIP Publishing.
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