Leakage current reduction in β-Ga2O3 Schottky barrier diode with p-NiOx guard ring

A beta-Ga2O3 Schottky barrier diode (SBD) with a p-type NiOx guard ring was fabricated, and the reverse leakage and subthreshold leakage current reduction was found at high temperatures from temperature-dependent I-V characteristics. The functional mechanisms of NiOx as edge termination on leakage reduction were studied. NiOx can increase the barrier height and passivate the defects at the interface, resulting in the suppression of subthreshold leakage and elimination of current crowding effect confirmed by a thermal emission microscope. From the temperature-dependent x-ray photoelectron spectroscopy characteristics, more holes generated to deplete Ga2O3 at higher temperatures were found. It leads to reduce the reverse leakage current. The small-polaron transportation in NiOx is proposed to argue the implausibility of the leakage conduction in NiOx. This work will offer critical physical insight and a valuable route for developing low-leakage Ga2O3 SBDs.

Automated summary

In this study, a beta-Ga2O3 Schottky barrier diode (SBD) with a p-type NiOx guard ring was fabricated, and the functional mechanisms of NiOx in leakage reduction were studied. The experimental results demonstrate that NiOx can increase the barrier height, passivate interfacial defects, and suppress subthreshold leakage and the current crowding effect.