4.6 Article

One-dimensional bandgap modulation at continuous few-layer MoS2 steps

Journal

APPLIED PHYSICS LETTERS
Volume 121, Issue 23, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0117436

Keywords

-

Funding

  1. Ministry of Science and Technology of Taiwan
  2. MOST
  3. [109-2119-M-002-024]

Ask authors/readers for more resources

Researchers have studied the electronic structures of different types of MoS2 steps using scanning tunneling microscopy and spectroscopy. They found that each type has unique bandgap features, which can be modified by choosing different edge conditions.
In pursuit of novel two-dimensional devices, lateral heterostructures based on transition metal dichalcogenides (TMDCs) have been intensively proposed and demonstrated. For instance, heterojunctions composed of TMDCs with different thicknesses function attractively in electronics and optoelectronics. Using scanning tunneling microscopy and spectroscopy, we resolved electronic structures of three types of few-layer MoS2 steps: flake edges, continuous bilayer-monolayer steps, and monolayers sitting on highly oriented pyrolytic graphite steps. Each type possesses unique bandgap features, including in-gap states and npn-like band alignment, which suggests modifiable 1D bandgaps via choices of edge conditions for the development of lateral TMDC devices.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available