Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation

Bipolar degradation in SiC bipolar devices, in which stacking faults (SFs) expand to accommodate the movement of partial dislocations during forward bias application, is one of the critical problems impeding the widespread implementation of SiC power devices. Here we clearly demonstrate that the movement of partial dislocations can be suppressed by proton implantation, which has good compatibility with semiconductor processing, through investigation of the contraction behavior of SFs in SiC epitaxial layers subjected to proton implantation.

Automated summary

The movement of partial dislocations in SiC bipolar devices can be suppressed by proton implantation, which is compatible with semiconductor processing. This finding addresses the issue of bipolar degradation in SiC power devices.