A CuxS/GO composite hole transport layer for photovoltaic performance enhancement on CuInS2 quantum dot-sensitized solar cells

In this work, a CuxS/GO composite hole transport layer is prepared on the surface of TiO2/CuInS2 photo-electrodes to modulate the charge transfer efficiency of quantum dot-sensitized solar cells. The normalized PL intensity of TiO2/CuInS2 photo-electrodes had been obviously quenched with the as-prepared CuxS/GO composite hole transport layer, which had exhibited excellent charge separation properties of the solar cells. Due to the reduce of charge recombination traps under CuxS/GO composite hole transport layer, the charge transfer efficiency of the solar cells had been effectively improved. As a result, the higher V-oc, FF and J(sc) value can be obtained for TiO2/CuInS2 quantum dot sensitized solar cells with this CuxS/GO composite hole transport layer, which had exhibited the photovoltaic conversion efficiency enhancement from 4.85% to 6.07%.

Automated summary

In this study, a CuxS/GO composite hole transport layer is used to modulate the charge transfer efficiency of quantum dot-sensitized solar cells. The introduction of the CuxS/GO composite layer significantly reduces the normalized PL intensity of TiO2/CuInS2 photo-electrodes, indicating excellent charge separation properties. The charge recombination traps are also reduced under the CuxS/GO composite layer, leading to an effective improvement in the charge transfer efficiency of the solar cells. As a result, TiO2/CuInS2 quantum dot-sensitized solar cells with the CuxS/GO composite layer exhibit higher V-oc, FF and J(sc) values, resulting in an enhancement of the photovoltaic conversion efficiency from 4.85% to 6.07%.