Boron-Thioketonates: A New Class of S,O-Chelated Boranes as Acceptors in Optoelectronic Devices

Development of new n-type semiconductors with tunable band gap and dielectric constant has significant implication in dissociating bound charge carrier relevant for demonstrating high performance optoelectronic devices. Boron-beta-thioketonates (MTDKB), analogues to boron-beta-diketonates containing a sulfur atom in the framework of beta-diketones were synthesized. Bulk transport measurement exhibited an outstanding bulk electron mobility of asymptotic to 0.003 cm(2) V(- 1)s(- 1),which is among the best values reported till date in these class of semiconducting materials and correspondingly a single junction photo responsivity of upto 6 mA W- 1 was obtained. This new family of O,S-chelated boron compounds exhibited luminescence in the far red/nearinfrared region. The remarkable red shift of 89 nm (fluorescence) observed for 4 a in comparison with analogues boron-beta-diketonate signifies the importance of sulfur in these molecules. MTDKBs with amine functionality have also been investigated as an ON/OFF fluorescent sensor.

Automated summary

The development of new n-type semiconductors with tunable band gap and dielectric constant is important for high-performance optoelectronic devices. Boron-beta-thioketonates (MTDKB), which are analogues to boron-beta-diketonates containing a sulfur atom, were synthesized. The MTDKBs exhibited outstanding bulk electron mobility and single junction photo responsivity. They also showed luminescent properties and were investigated as fluorescent sensors with amine functionality.