Journal
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS
Volume 158, Issue -, Pages -Publisher
ELSEVIER GMBH
DOI: 10.1016/j.aeue.2022.154452
Keywords
Bio-Inspired Architecture; Spintronic; Magnetic Tunnel Junction (MTJ); Gate-all-around carbon nanotube field-effect; transistors (GAA-CNTFET); Multi-level Memory (MLM); Radiation Hardening
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The authors propose a bio-inspired, low-cost, and highly reliable non-volatile memory design with multi-bit storage capability in one cell to address the challenges of high area and high power consumption. The proposed design offers higher data density, lower area, and lower power consumption per bit compared to single-level memories. The simulation results demonstrate significant improvements in area, power, and immunity to errors.
This paper proposes a bio-inspired, low-cost, and highly reliable non-volatile memory design with multi-bit storage capability in one cell to answer the existing memory challenges such as high area and high power consumption. The proposed Multi-level memory (MLM) is based on magnetic tunnel junction (MTJ) as a non-volatile memory element and carbon nanotube field-effect transistors (CNTFET). MLM design provides higher data density, lower area, and lower power consumption per bit of the stored data than single-level memories (SLM). MTJs introduce nonvolatility and near-zero leakage current to the proposed MLM design, which is very important in memory cells. Moreover, as no sequential part is used in the proposed MLM, the proposed memory is also immune to energetic particle strikes. The simulation results indicate that our proposed MLM occupies at least an 80% lower area and offers a 20% lower Power Delay Product (PDP) and an 84% lower Power Delay Area Product (PDAP) than the state-of-the-art designs. Moreover, our results validate the SEU and SEMU immunity of the proposed circuit. Furthermore, the comprehensive Monte-Carlo and corner simulations ascertain the robustness of the proposed MLM memory, even in the presence of a significant process variation.
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