Related references
Note: Only part of the references are listed.Memristive technologies for data storage, computation, encryption, and radio-frequency communication
Mario Lanza et al.
SCIENCE (2022)
Understanding the switching mechanism of oxygen-doped Sb phase-change material: Insights from first principles
Yuemei Sun et al.
JOURNAL OF APPLIED PHYSICS (2022)
Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics
Yuan Xue et al.
NANO-MICRO LETTERS (2021)
Keep it simple and switch to pure tellurium
Raffaella Calarco et al.
SCIENCE (2021)
Elemental electrical switch enabling phase segregation-free operation
Jiabin Shen et al.
SCIENCE (2021)
Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials
Jin Zhao et al.
NATURE COMMUNICATIONS (2021)
Memory Technology 2021: Trends & Challenges
Jeongdong Choe
2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021) (2021)
Mechanism of amorphous phase stabilization in ultrathin films of monoatomic phase change material
Daniele Dragoni et al.
NANOSCALE (2021)
Direct atomic insight into the role of dopants in phase-change materials
Min Zhu et al.
NATURE COMMUNICATIONS (2019)
Thermal Barrier Phase Change Memory
Jiabin Shen et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Local Structural Origin of the Crystallization Tendency of Pure and Alloyed Sb
Ider Ronneberger et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2019)
Designing crystallization in phase-change materials for universal memory and neuro-inspired computing
Wei Zhang et al.
NATURE REVIEWS MATERIALS (2019)
Monatomic phase change memory
Martin Salinga et al.
NATURE MATERIALS (2018)
In-memory computing with resistive switching devices
Daniele Ielmini et al.
NATURE ELECTRONICS (2018)
Accurate and simple analytic representation of the electron-gas correlation energy (vol 45, 13244, 1992)
John P. Perdew et al.
PHYSICAL REVIEW B (2018)
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
Feng Rao et al.
SCIENCE (2017)
Phase-Change Memory Materials by Design: A Strain Engineering Approach
Xilin Zhou et al.
ADVANCED MATERIALS (2016)
Memory leads the way to better computing
H. -S. Philip Wong et al.
NATURE NANOTECHNOLOGY (2015)
One order of magnitude faster phase change at reduced power in Ti-Sb-Te
Min Zhu et al.
NATURE COMMUNICATIONS (2014)
Measurement of crystal growth velocity in a melt-quenched phase-change material
Martin Salinga et al.
NATURE COMMUNICATIONS (2013)
Breaking the Speed Limits of Phase-Change Memory
D. Loke et al.
SCIENCE (2012)
Enabling Universal Memory by Overcoming the Contradictory Speed and Stability Nature of Phase-Change Materials
Weijie Wang et al.
SCIENTIFIC REPORTS (2012)
Interfacial phase-change memory
R. E. Simpson et al.
NATURE NANOTECHNOLOGY (2011)
Carbon-doped GeTe: A promising material for Phase-Change Memories
G. Betti Beneventi et al.
SOLID-STATE ELECTRONICS (2011)
Electrical Behavior of Phase-Change Memory Cells Based on GeTe
Luca Perniola et al.
IEEE ELECTRON DEVICE LETTERS (2010)
A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
Stefan Grimme et al.
JOURNAL OF CHEMICAL PHYSICS (2010)
Phase change memory technology
Geoffrey W. Burr et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2010)
Nanosecond switching in GeTe phase change memory cells
G. Bruns et al.
APPLIED PHYSICS LETTERS (2009)
Observation of the Role of Subcritical Nuclei in Crystallization of a Glassy Solid
Bong-Sub Lee et al.
SCIENCE (2009)
Fast phase transitions induced by picosecond electrical pulses on phase change memory cells
W. J. Wang et al.
APPLIED PHYSICS LETTERS (2008)
Phase-change materials for rewriteable data storage
Matthias Wuttig et al.
NATURE MATERIALS (2007)
Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview
L van Pieterson et al.
JOURNAL OF APPLIED PHYSICS (2005)
Prospects of doped Sb-Te phase-change materials for high-speed recording
MHR Lankhorst et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2003)
Share Paper
