4.3 Article

Effect of energy level configuration on storage of optical solitons in InAs/GaAs quantum dot electromagnetically induced transparency medium

Journal

ACTA PHYSICA SINICA
Volume 72, Issue 8, Pages -

Publisher

CHINESE PHYSICAL SOC
DOI: 10.7498/aps.72.20221965

Keywords

electromagnetically induced transparency; storage and retrieval of optical solitons; semiconductor quantum dot

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Based on the current growth technology of quantum dot in the experiment, different energy level configurations can be formed in InAs/GaAs quantum dots. The linear and nonlinear properties of these energy level configurations are studied using semiclassical theory combined with multiple scale method. Transparent windows in electromagnetic induction can be formed among different energy level configurations, and the width of the transparent window increases with the strength of the control pulse. Optical solitons can be formed and stored in certain energy level configurations, but not in others due to weak nonlinear effects. The fidelity of the storage and retrieval of optical solitons is higher than that of linear optical pulse and strongly nonlinear optical pulse.
Based on the current growth technology of quantum dot in the experiment, considering that the probe fields and control fields at different frequencies are coupled between different energy levels of the InAs/GaAs quantum dot, the ladder-type, L-type and V-type energy level configurations can be formed. The linear and nonlinear properties of these energy level configurations of InAs/GaAs quantum dots are studied by using semiclassical theory combined with multiple scale method. It is shown that in the linear case, electromagnetic induction transparency windows can be formed among ladder-type, L-type and V-type energy level configurations. And the width of the transparent window increases with the strength of the control pulse increasing. For the nonlinear case, under the current experimental condition, optical solitons can be formed and stored in ladder-type configuration and-type energy level configuration. However, optical solitons cannot be formed in the V-type energy level configurations, which is because the nonlinear effect of the system is very weak. Furthermore, it is demonstrated that the fidelity of the storage and retrieval of the optical solitons is higher than that of linear optical pulse and strongly nonlinear optical pulse. Interestingly, it is also found that the amplitude of stored optical solitons in-type energy level configuration is higher than that in ladder-type energy level configuration. This study provides a theoretical basis for semiconductor quantum dot devices to modulate the amplitude of the stored optical solitons.

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