High-Gain MoS2/Ta2NiSe5 Heterojunction Photodetectors with Charge Transfer and Suppressing Dark Current

Emerging two-dimensional narrow band gap materials with tunable band gaps and unique electrical and optical properties have shown tremendous potential in broadband photodetection. Nevertheless, large dark currents severely hinder the performance of photodetectors. Here, a MoS2/Ta2NiSe5 van der Waals heterostructure device was successfully fabricated with a high rectification ratio of similar to 10(4) and an ultralow reverse bias current of the pA level. Excitingly, the charge transfer and the generation of the built-in electric field of heterostructures have been proved by theory and experiment, which effectively suppress dark currents. The dark current of the heterostructure reduces by nearly 10(4) compared with the pure Ta2NiSe5 photodetector at V-ds = 1 V. The MoS2/Ta2NiSe5 device exhibits excellent photoelectric performance with the maximum responsivity of 515.6 A W-1 and 0.7 A W-1 at the wavelengths of 532 and 1064 nm under forward bias, respectively. In addition, the specific detectivity is up to 3.1 x 10(13) Jones (532 nm) and 2.4 x 10(9) Jones (1064 nm). Significantly, the device presents an ultrahigh gain of 6 x 10(7) and an exceptional external quantum efficiency of 1.2 X 10(5)% under 532 nm laser irradiation. The results reveal that the MoS2/Ta2NiSe5 heterostructure provides an essential platform for the development and application of high-performance broadband optoelectronic devices.

Automated summary

In this study, a MoS2/Ta2NiSe5 van der Waals heterostructure device was successfully fabricated, showing high rectification ratio and ultralow reverse bias current. The charge transfer and generation of the built-in electric field effectively suppressed dark currents. The device exhibited excellent photoelectric performance and provided an important platform for the development and application of high-performance broadband optoelectronic devices.