Journal
ACS APPLIED MATERIALS & INTERFACES
Volume -, Issue -, Pages -Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.2c21202
Keywords
multilayer; energy storage; antiferroelectric; interface engineering; PZO; PTO
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In this work, a high-performance multilayer heterostructure (PbZrO3/PbTiO3)n is reported, which achieves a high electric breakdown strength (2.9 MV/cm) and a maximum recoverable energy storage density of 36.4 J/cm3 through the heterostructure strategy. The competitive effects of interfacial blockage and local strain defects on the breakdown strength are revealed, showing an inflection point at n = 3. Atomic-scale characterizations shed light on the underlying microstructure mechanism of the interplay between heterointerface dislocations and decreased energy storage performance. This study demonstrates the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.
Antiferroelectric thin-film capacitors with ultralow remanent polarization and fast discharge speed have attracted extensive attention for energy storage applications. A multilayer heterostructure is considered to be an efficient approach to enhance the breakdown strength and improve the functionality. Here, we report a high-performance multilayer heterostructure (PbZrO3/PbTiO3)n with a maximum recoverable energy storage density of 36.4 J/cm3 due to its high electric breakdown strength (2.9 MV/cm) through the heterostructure strategy. The positive effect of interfacial blockage and the negative effect of local strain defects competitively affect the breakdown strength, showing an inflection point at n = 3. The atomic-scale characterizations reveal the underlying microstructure mechanism of the interplay between the heterointerface dislocations and the decreased energy storage performance. This work offers the potential of well-designed multilayers with high energy storage performance through heterostructure engineering.
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