4.8 Article

Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors

Related references

Note: Only part of the references are listed.
Article Chemistry, Physical

Direct growth of graphene-MoS2 heterostructure: Tailored interface for advanced devices

Roberto Munoz et al.

Summary: Ultrathin film heterostructures are essential for modern devices. The combination of 2D materials into van der Waals multilayers offers a promising method to create heterostructures with outstanding properties. The MoS2-Graphene heterostructures exhibit suitable contact properties for efficient charge injection and transfer. In this study, graphene films were directly synthesized on MoS2 using Plasma Assisted CVD, and the use of Sulfur vapor was found to increase the graphene grain size.

APPLIED SURFACE SCIENCE (2022)

Article Chemistry, Physical

T-Phase and H-Phase Coupled TMD van der Waals Heterostructure ZrS2/MoTe2 with Both Rashba Spin Splitting and Type-III Band Alignment

Xiujuan Mao et al.

Summary: This study systematically explores the electronic structures of the ZrS2/MoTe2 heterostructure using first-principles calculations. The results show the coexistence of Rashba splitting and type-III band alignment in this system, making it of interest for spin-field-effect transistor applications. The study also reveals that the electronic structure undergoes a crucial change from a type-III to a type-II band alignment under negative electric field, which is beneficial for designing multi-purpose devices.

JOURNAL OF PHYSICAL CHEMISTRY C (2022)

Article Materials Science, Multidisciplinary

Two-dimensional MoTe2/SnSe2 van der Waals heterostructures for tunnel-FET applications

Konstantina Iordanidou et al.

Summary: In this work, the authors explore heterostructures composed of 2D MoTe2 and SnSe2 and investigate their potential for tunnel field-effect transistors (TFETs) using first-principles calculations. They find that the band alignment of the heterostructures can be tuned by applying external electric fields, making them highly promising for TFET applications. The simulations provide fundamental insights into the electronic properties of MoTe2/SnSe2 stacks and pave the way for future design and fabrication of TFETs based on these materials.

PHYSICAL REVIEW MATERIALS (2022)

Article Computer Science, Interdisciplinary Applications

VASPKIT: A user-friendly interface facilitating high-throughput computing and analysis using VASP code

Vei Wang et al.

Summary: VASPKIT is a command-line program that provides a robust and user-friendly interface for high-throughput analysis of material properties. It consists of pre-and post-processing modules, can run on different platforms, and offers rich functionalities and a user-friendly interface.

COMPUTER PHYSICS COMMUNICATIONS (2021)

Article Engineering, Electrical & Electronic

Optoelectronic properties of coexisting InGaZnO4 structures

Konstantina Iordanidou et al.

Summary: In this study, the fundamental properties of crystalline InGaZnO4 were analyzed, identifying the most stable Ga/Zn atomic distribution patterns and revealing its characteristics as an indirect band-gap semiconductor. The material exhibits good electron mobility and suppressed hole mobility, resulting in lower power consumption in future InGaZnO4-based transistors.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)

Article Engineering, Electrical & Electronic

Advanced DFT-NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Metal/Semiconductor Contact

A. Afzalian et al.

Summary: This paper presents advanced density functional theory and nonequilibrium Green's function techniques implemented in ATOMOS for exploring transport in novel materials and devices, particularly in van der Waals heterojunction transistors. The methodologies used include plane-wave DFT, Wannierization, and linear combination of atomic orbital DFT to create orthogonal and nonorthogonal NEGF models, with a focus on electron-phonon scattering within a nonorthogonal framework. Applications of these methods include exploration of novel 2-D materials and devices, such as dynamically doped FETs and vdW tunneling field-effect transistors.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Article Chemistry, Multidisciplinary

Layer-dependent interface reconstruction and strain modulation in twisted WSe2

Xiangbin Cai et al.

Summary: The study investigates the interface reconstruction of twisted WSe2 through electron diffraction quantification and atomic-resolution imaging, revealing a strong correlation with constituent layer numbers and twist angles. The competition between interlayer interaction and intralayer elastic deformation leads to rich superlattice motifs and strain modulation patterns.

NANOSCALE (2021)

Article Nanoscience & Nanotechnology

Vertical Heterostructure of SnS-MoS2 Synthesized by Sulfur-Preloaded Chemical Vapor Deposition

Mengjuan Diao et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

Article Chemistry, Multidisciplinary

Synthetic Semimetals with van der Waals Interfaces

Bojja Aditya Reddy et al.

NANO LETTERS (2020)

Article Nanoscience & Nanotechnology

Strain-induced effects on the electronic properties of 2D materials

Sara Postorino et al.

NANOMATERIALS AND NANOTECHNOLOGY (2020)

Article Multidisciplinary Sciences

Twist-angle dependence of moire excitons in WS2/MoSe2 heterobilayers

Long Zhang et al.

NATURE COMMUNICATIONS (2020)

Article Physics, Multidisciplinary

Topological Insulators in Twisted Transition Metal Dichalcogenide Homobilayers

Fengcheng Wu et al.

PHYSICAL REVIEW LETTERS (2019)

Article Chemistry, Multidisciplinary

Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation

Ngoc Thanh Duong et al.

ACS NANO (2019)

Article Materials Science, Multidisciplinary

Rashba splitting in bilayer transition metal dichalcogenides controlled by electronic ferroelectricity

Zuzhang Lin et al.

PHYSICAL REVIEW B (2019)

Article Nanoscience & Nanotechnology

Quantum engineering of transistors based on 2D materials heterostructures

Giuseppe Iannaccone et al.

NATURE NANOTECHNOLOGY (2018)

Article Engineering, Electrical & Electronic

The prospects of transition metal dichalcogenides for ultimately scaled CMOS

S. Thiele et al.

SOLID-STATE ELECTRONICS (2018)

Article Multidisciplinary Sciences

Vertical WS2/SnS2 van der Waals Heterostructure for Tunneling Transistors

Jiaxin Wang et al.

SCIENTIFIC REPORTS (2018)

Article Physics, Condensed Matter

Effects of vertical electric field and compressive strain on electronic properties of bilayer ZrS2

Jimin Shang et al.

JOURNAL OF SEMICONDUCTORS (2017)

Article Nanoscience & Nanotechnology

Toward an Understanding of the Electric Field-Induced Electrostatic Doping in van der Waals Heterostructures: A First-Principles Study

Anh Khoa Augustin Lu et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

Article Nanoscience & Nanotechnology

Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures

Dimitra Tsoutsou et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Nanoscience & Nanotechnology

Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures

Kleopatra Emmanouil Aretouli et al.

ACS APPLIED MATERIALS & INTERFACES (2016)

Article Materials Science, Multidisciplinary

Strain-induced enhancement in the thermoelectric performance of a ZrS2 monolayer

H. Y. Lv et al.

JOURNAL OF MATERIALS CHEMISTRY C (2016)

Article Materials Science, Multidisciplinary

Strong spin-orbit splitting and magnetism of point defect states in monolayer WS2

Wun-Fan Li et al.

PHYSICAL REVIEW B (2016)

Article Computer Science, Interdisciplinary Applications

CellMatch: Combining two unit cells into a common supercell with minimal strain

Predrag Lazic

COMPUTER PHYSICS COMMUNICATIONS (2015)

Article Chemistry, Multidisciplinary

Electrically Tunable Bandgaps in Bilayer MoS2

Tao Chu et al.

NANO LETTERS (2015)

Article Chemistry, Physical

Two-dimensional semiconductors with possible high room temperature mobility

Wenxu Zhang et al.

NANO RESEARCH (2014)

Review Nanoscience & Nanotechnology

Electronics based on two-dimensional materials

Gianluca Fiori et al.

NATURE NANOTECHNOLOGY (2014)

Article Materials Science, Multidisciplinary

Exchange functional that tests the robustness of the plasmon description of the van der Waals density functional

Kristian Berland et al.

PHYSICAL REVIEW B (2014)

Review Multidisciplinary Sciences

Tunnel field-effect transistors as energy-efficient electronic switches

Adrian M. Ionescu et al.

NATURE (2011)

Article Materials Science, Multidisciplinary

Van der Waals density functionals applied to solids

Jiri Klimes et al.

PHYSICAL REVIEW B (2011)

Article Multidisciplinary Sciences

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

Jonathan N. Coleman et al.

SCIENCE (2011)

Article Engineering, Electrical & Electronic

Device and Architecture Outlook for Beyond CMOS Switches

Kerry Bernstein et al.

PROCEEDINGS OF THE IEEE (2010)

Article Engineering, Electrical & Electronic

Low-Voltage Tunnel Transistors for Beyond CMOS Logic

Alan C. Seabaugh et al.

PROCEEDINGS OF THE IEEE (2010)

Article Chemistry, Physical

Hybrid functionals based on a screened Coulomb potential

J Heyd et al.

JOURNAL OF CHEMICAL PHYSICS (2003)