Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication

Direct chemical vapor deposition of graphene on semiconductors and insulators provides high feasibility for integration of graphene devices and semiconductor electronics. However, the current methods typically rely on high temperatures (>1000 degrees C), which can damage the substrates. Here, a growth method for high-quality large-area graphene at 300 degrees C is introduced. A multizone furnace with gradient temperature control was designed according to a computational fluid dynamics model. The crucial roles of the chamber pressure in the film continuity and hydrogen composition in the graphene defect density at low temperature were revealed. As a result, a uniform graphene film with the Raman ratio ID/IG = 0.08 was obtained. Furthermore, a technique of laminating single-crystal Cu foil as a sacrificial layer on the substrate was proposed to realize transfer-free growth, and a wafer-scale graphene transistor array was demonstrated with good performance consistency, which paves the way for mass fabrication of graphene devices.

Automated summary

This study introduces a method for growing high-quality large-area graphene at low temperatures. By controlling the chamber pressure and hydrogen content, a uniform graphene film is successfully obtained. Additionally, a transfer-free growth technique is proposed, demonstrating a graphene transistor array with good performance consistency.