Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 16, Issue 4, Pages 3608-3612Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2016.11826
Keywords
BaSi2O2N2; Oxynitrides; Phosphor; Photoluminescence
Categories
Funding
- National Natural Science Foundation of China [51172216]
- Fundamental Research Funds for the Central Universities [2012067]
- Program for New Century Excellent Talents in University of the Ministry of Education of China [NCET-12-0951]
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Ge4+-doped BaSi2O2N2:Eu2+ phosphors were prepared by a high temperature solid-state reaction method. The phase structure, photoluminescence (PL) properties and PL thermal stability of the as-synthesized samples were investigated. The emission intensity of the Ba(Si0.99Ge0.01)(2)O2N2: 0.05Eu(2+) phosphor was 41.7% greater than that of BaSi2O2N2:0.05Eu(2+). When the temperature increased to 150 degrees C, the emission intensity of Ba(Si0.99Ge0.01)(2)O2N2:0.05Eu(2+) phosphor was 67.0% of the initial value at room temperature. This value was 22.9% greater than that of BaSi2O2N2:0.05Eu(2+). The related mechanism has also been explained through the crystal field theory. All these results indicated that the Ge4+-doped BaSi2O2N2:0.05Eu(2+) phosphor is a promising material for application in white light emitting diodes.
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