4.7 Article

Excited state proton transfer coupled with twisted intermolecular charge transfer for N,N-dimethylanilino-1,3-diketone in high polar acetonitrile solvent

Journal

JOURNAL OF MOLECULAR LIQUIDS
Volume 220, Issue -, Pages 735-741

Publisher

ELSEVIER
DOI: 10.1016/j.molliq.2016.05.029

Keywords

Hydrogen bond; ESIPT; TICT; Frontier molecular orbitals; Potential energy surfaces

Funding

  1. National Basic Research Program of China [2013CB834604]
  2. National Natural Science Foundation of China [21473195, 21321091]

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In the present work, N,N-dimethylanilino-1,3-diketone (DMADK), a new chromophore of the unsymmetrically substituted 1,3-diketone [R Ghosh and D.K. Palit, Photochem. Photobiol. Sci. 12 (2013) 987-995], has been investigated about the excited state proton transfer (ESPT) based on the time-dependent density functional theory (TDDFT) method. The experimental UV/Vis and emission spectra are well reproduced by the calculated vertical excitation energies in the So and Si states. For the optimized Enol-B* structure, the twisted intermolecular charge transfer (TILT) process can be confirmed in the Si state. Hydrogen bond strengthening has been testified in the Si state based on comparing primary bond lengths and bond angles involved in the intramolecular hydrogen bond between the So state and the Si state. Furthermore, infrared spectra (IR) at the O-H stretching vibrational region and Molecular electrostatic potential surface (MEPS) based on our calculation also declare the phenomenon of hydrogen bond strengthening. The frontier molecular orbitals (MOs) analysis, MEPS, Mulliken's charge distribution analysis, Hirshfeld charge distribution analysis and Natural bond orbital (NBO) analysis methods manifest the intramolecular charge transfer, which reveals the tendency of excited state intramolecular proton transfer (ESIPT) process. The constructed PESs of both So and Si states demonstrate that ground state intramolecular proton transfer (GSIPT) as well as reversed GSIPT processes exists in the So state, and the ESIPT coupled with the TICT process can occur in the Si state rather than sequential ESIPT and TICT processes. (C) 2016 Published by Elsevier B.V.

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