Journal
JOURNAL OF SEMICONDUCTORS
Volume 43, Issue 9, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1674-4926/43/9/092501
Keywords
magnetic semiconductor; homojunction; magnetoresistance; MR anisotropic
Categories
Funding
- National Key Research and Development Program of China [2017YFA0207500]
- National Natural Science Foundation of China [62125404]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB43000000]
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Researchers constructed a two-dimensional Fe doped SnS2 homogeneous junction and discovered that it exhibits large magnetoresistance effect. The magnetoresistance effect can be regulated by applying a gate voltage, making it promising for future applications.
A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important component of future spintronic devices. Here, we construct a two-dimensional (2D) Fe doped SnS2 (Fe-SnS2) homogeneous junction and investigate its electromagnetic transport feature. The Fe-SnS2 homojunction device showed large positive and unsaturated magnetoresistance (MR) of 1800% in the parallel magnetic field and 600% in the vertical magnetic field, indicating an obvious anisotropic MR feature. In contrast, The MR of Fe-SnS2 homojunction is much larger than the pure diamagnetic SnS2 and most 2D materials. The application of a gate voltage can regulate the MR effect of Fe-SnS2 homojunction devices. Moreover, the stability of Fe-SnS2 in air has great application potential. Our Fe-SnS2 homojunction has a significant potential in future magnetic memory applications.
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