Journal
ISCIENCE
Volume 25, Issue 10, Pages -Publisher
CELL PRESS
DOI: 10.1016/j.isci.2022.105217
Keywords
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Categories
Funding
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- Sino-Russia International Joint Laboratory of Terahertz Materials and Devices
- Shanghai Municipal Sci- ence and Technology Major Project
- Fund of SITP Innovation Foundation
- [12134016]
- [61625505]
- [ZDBS-LY-JSC025]
- [18590750500]
- [2019SHZDZX01]
- [CX-343]
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In this study, a room temperature THz photodetector utilizing the electromagnetic induced well mechanism with an SOI-based structure was reported. The detector achieved high sensitivity, fast response, and low noise equivalent power, paving the way for the realization of Si-based THz focal plane arrays with wide applications.
Silicon (Si) is the most important semiconductor material broadly used in both electronics and optoelectronics. However, the performance of Si-based room temperature detectors is far below the requirements for direct detection in the terahertz (THz) band, a very promising electromagnetic band for the next-generation technology. Here, we report a high sensitivity of room temperature THz photodetector utilizing the electromagnetic induced well mechanism with an SOI-based structure for easy integration. The detector achieves a responsivity of 122 kV W-1, noise equivalent power ( NEP) of 0.16 pW Hz(-1/2), and a fast response of 1.29 mu s at room temperature. The acquired NEP of the detector is similar to 2 orders lower in magnitude than that of other types of Si-based detectors. Our results pave the way to realize Si-based THz focal plane arrays, which can be used in a wide range of applications, such as medical diagnosis, remote sensing, and security inspection.
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